Radio Frequency Micro-Electro-Mechanical System Capacitive Shunt Switch Using Actively Formed Wrinkled Hinge Structures
In this paper, a highly reliable radio frequency micro-electro-mechanical system (RF MEMS) capacitive shunt switch was has newly designed, fabricated, and characterized using dual-anchor and wrinkled membrane structures. The proposed capacitive shunt switch exhibited considerably much better performance and lower actuation voltage than conventional fixed-fixed membrane structured capacitive shunt switches. It the proposed capacitive shunt switch showed low insertion loss of −0.074 dB at 2 GHz in ‘ON’ state and isolation of −14 dB over 10 GHz in ‘OFF’ state, respectively. The measured ‘ON/OFF’ switching time and size of the switch were 48/108 msec and 0.76 × 1.76 × 0.0047 (H) mm,3 respectively.
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